Vishay SI8824EDB N-Channel MOSFET, 2.1 A, 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1
- RS Stock No.:
- 256-7399
- Mfr. Part No.:
- SI8824EDB-T2-E1
- Brand:
- Vishay
This image is representative of the product range
Get a bulk buy discount
Add 50 more to save 1%
View bulk pricing optionsSubtotal (1 pack of 25 units)*
$12.60
(exc. GST)
$14.50
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
Temporarily out of stock
- Shipping from 14 December 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 25 - 25 | $0.504 | $12.60 | - |
| 50 - 75 | $0.494 | $12.35 | 1% |
| 100 - 225 | $0.378 | $9.45 | 25% |
| 250 - 975 | $0.37 | $9.25 | 26% |
| 1000 + | $0.229 | $5.73 | 54% |
*price indicative
- RS Stock No.:
- 256-7399
- Mfr. Part No.:
- SI8824EDB-T2-E1
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | SI8824EDB | |
| Package Type | MICRO FOOT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.175Ω | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Typical Gate Charge Qg @ Vgs | 2.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.9W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Height | 402μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series SI8824EDB | ||
Package Type MICRO FOOT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.175Ω | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 5V | ||
Typical Gate Charge Qg @ Vgs 2.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.9W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Height 402μm | ||
Automotive Standard No | ||
Vishay SI8824EDB Series MOSFET, 20V Maximum Drain Source Voltage, 2.1A Maximum Continuous Drain Current - SI8824EDB-T2-E1
This n-channel MOSFET is a compact surface-mount switching transistor designed for low-voltage power management and fast switching tasks. It operates within extreme ambient ranges and is intended for use where a small footprint and logic-level gate drive are required. The device complies with RoHS and is supplied in a MICRO FOOT package suitable for high-density assemblies.
Features and Benefits:
• Low on-resistance 0.175Ω enables reduced conduction losses
• Continuous drain current 2.1A supports moderate load currents
• Gate threshold tuned for Vgs 5V logic-level compatibility
• Typical gate charge 2.7nC for rapid switching performance
• Maximum power dissipation 0.9W manages thermal load in compact layouts
• Forward voltage 1.2V aids in predicting conduction drop
• Continuous drain current 2.1A supports moderate load currents
• Gate threshold tuned for Vgs 5V logic-level compatibility
• Typical gate charge 2.7nC for rapid switching performance
• Maximum power dissipation 0.9W manages thermal load in compact layouts
• Forward voltage 1.2V aids in predicting conduction drop
Applications
• Suitable for battery-powered DC-DC converters in compact designs
• Ideal for high-density power distribution on SMD assemblies
• Used with microcontrollers requiring Vgs 5V switching
• Can be used for low-voltage motor drivers and load switches
• Appropriate for signal-level power control in consumer electronics
• Ideal for high-density power distribution on SMD assemblies
• Used with microcontrollers requiring Vgs 5V switching
• Can be used for low-voltage motor drivers and load switches
• Appropriate for signal-level power control in consumer electronics
What thermal extremes can the device endure in operation?
It is rated to operate from -55°C up to +150°C, allowing use in demanding temperature environments.
How does the package affect board layout considerations?
The MICRO FOOT surface-mount format minimises vertical and lateral space, facilitating tight component placement and low-profile assemblies.
What electrical limit should designers observe for drain-source voltage?
The maximum drain-source voltage is 20V, so designs must keep system voltages below this threshold.
How does switching behaviour influence gate drive selection?
With a typical gate charge of 2.7nC, gate drivers must supply sufficient current for the desired edge rates without excessive losses.
Related links
- Vishay Type N-Channel MOSFET 20 V, 4-Pin MICRO FOOT
- Vishay TrenchFET Type N-Channel MOSFET 8 V Enhancement, 4-Pin MICRO FOOT
- Vishay TrenchFET Type N-Channel MOSFET 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- Vishay Type N-Channel MOSFET 8 V, 6-Pin MICRO FOOT
- Vishay Type N-Channel MOSFET 8 V, 6-Pin MICRO FOOT SI8416DB-T2-E1
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin MICRO FOOT