Infineon HEXFET Type N-Channel MOSFET, 72 A, 200 V TO-262 IRFS4127TRLPBF
- RS Stock No.:
- 257-5836
- Mfr. Part No.:
- IRFS4127TRLPBF
- Brand:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
$12.27
(exc. GST)
$14.11
(inc. GST)
FREE delivery for orders over $60.00 ex GST
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- Shipping from 21 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $6.135 | $12.27 |
| 10 - 48 | $5.27 | $10.54 |
| 50 - 98 | $5.17 | $10.34 |
| 100 - 248 | $4.62 | $9.24 |
| 250 + | $4.53 | $9.06 |
*price indicative
- RS Stock No.:
- 257-5836
- Mfr. Part No.:
- IRFS4127TRLPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 18.6mΩ | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 18.6mΩ | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
High efficiency synchronous rectification in SMPS
Uninterruptible power supply
Related links
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