Infineon HEXFET N-Channel MOSFET, 162 A, 40 V TO-263 IRF1404STRLPBF
- RS Stock No.:
- 257-9274
- Distrelec Article No.:
- 304-40-515
- Mfr. Part No.:
- IRF1404STRLPBF
- Brand:
- Infineon
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$9.27
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 8 | $4.635 | $9.27 | - |
| 10 - 48 | $3.99 | $7.98 | 13% |
| 50 - 98 | $3.915 | $7.83 | 15% |
| 100 - 248 | $3.34 | $6.68 | 27% |
| 250 + | $3.215 | $6.43 | 30% |
*price indicative
- RS Stock No.:
- 257-9274
- Distrelec Article No.:
- 304-40-515
- Mfr. Part No.:
- IRF1404STRLPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 162A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 200W | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 162A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 200W | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the 40V single n channel HEXFET power mosfet in a D2 Pak package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate drive voltage (called normal level)
Industry standard surface mount power package
High current carrying capability package (up to 195 A, die size dependent)
Capable of being wave soldered
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-263
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-263
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- Infineon Single HEXFET 1 Type N-Channel MOSFET 40 V Enhancement, 3-Pin I2PAK IRF1404LPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-263