MPN

Infineon HEXFET N-Channel MOSFET, 6.5 A, 30 V SO-8

Name: Infineon HEXFET N-Channel MOSFET, 6.5 A, 30 V SO-8
Brand: Infineon
SKU: 257-9301P
Availability: InStock

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Subtotal 50 units (supplied on a continuous strip)*

$76.85

(exc. GST)

$88.40

(inc. GST)

In Stock

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*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.5A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SO-8
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	46mΩ
	Forward Voltage Vf	780mV
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.5A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SO-8
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 46mΩ
	Forward Voltage Vf 780mV
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

The Infineon IRF series is the 30V dual n channel HEXFET power mosfet in a SO 8 package.

RoHS compliant

Low RDS(on)

Dynamic dv/dt rating

Fast switching

Dual n channel mosfet

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