Infineon HEXFET Type N-Channel MOSFET, -9 A, 20 V, 8-Pin SO-8 IRF7324TRPBF
- RS Stock No.:
- 257-9303P
- Mfr. Part No.:
- IRF7324TRPBF
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied on a continuous strip)*
$122.50
(exc. GST)
$141.00
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
Last RS stock
- Final 200 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 50 - 95 | $2.45 |
| 100 - 495 | $1.976 |
| 500 - 1995 | $1.62 |
| 2000 + | $1.35 |
*price indicative
- RS Stock No.:
- 257-9303P
- Mfr. Part No.:
- IRF7324TRPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.75mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.75mm | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRF series is the -20V dual p channel HEXFET power mosfet in a SO 8 package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
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