Infineon HEXFET N-Channel MOSFET, 183 A, 75 V TO-220
- RS Stock No.:
- 257-9367P
- Mfr. Part No.:
- IRFB7734PBF
- Brand:
- Infineon
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$46.25
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$53.19
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In Stock
- 866 unit(s) ready to ship from another location
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Units | Per unit | Saving |
|---|---|---|
| 10 - 18 | $4.625 | - |
| 20 - 98 | $4.53 | $1.90 |
| 100 - 248 | $3.79 | $83.50 |
| 250 + | $3.77 | $213.75 |
*price indicative
- RS Stock No.:
- 257-9367P
- Mfr. Part No.:
- IRFB7734PBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 183A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 183A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRFB series is the 75V single n channel strong IRFET power mosfet in a TO 220 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Industry standard through hole power package
High current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Softer body diode compared to previous silicon generation
Wide portfolio available
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