Infineon HEXFET Type N-Channel MOSFET, 31 A, 100 V TO-252 IRFR3410TRPBF
- RS Stock No.:
- 257-9404
- Distrelec Article No.:
- 304-40-538
- Mfr. Part No.:
- IRFR3410TRPBF
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$4.72
(exc. GST)
$5.43
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- 1,505 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | $0.944 | $4.72 |
| 50 - 95 | $0.838 | $4.19 |
| 100 - 245 | $0.666 | $3.33 |
| 250 - 995 | $0.656 | $3.28 |
| 1000 + | $0.436 | $2.18 |
*price indicative
- RS Stock No.:
- 257-9404
- Distrelec Article No.:
- 304-40-538
- Mfr. Part No.:
- IRFR3410TRPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFR series is the 100V single n channel IR mosfet in a D Pak package. The IR mosfet family of power mosfets utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as dc motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount package
Related links
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement TO-252 IRFR3410TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IRFIZ44NPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 150 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 75 V TO-252