Infineon HEXFET N-Channel MOSFET, 8.3 A, 30 V Enhancement TSOP-6 IRLTS6342TRPBF
- RS Stock No.:
- 257-9467
- Distrelec Article No.:
- 304-40-555
- Mfr. Part No.:
- IRLTS6342TRPBF
- Brand:
- Infineon
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- RS Stock No.:
- 257-9467
- Distrelec Article No.:
- 304-40-555
- Mfr. Part No.:
- IRLTS6342TRPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TSOP-6 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 17.50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TSOP-6 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 17.50mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30V Maximum Drain-Source Voltage, 8.3A Maximum Continuous Drain Current - IRLTS6342TRPBF
This n-channel transistor is designed to switch and control medium-power loads in through‑hole assemblies. It operates across a wide temperature range and is suitable for designs requiring a low forward drop and modest power dissipation. The device is supplied in a TSOP‑6 through‑hole package and complies with RoHS restrictions.
Features and Benefits:
• 17.50mΩ Rds(on) reduces conduction losses
• 30V Vds enables moderate‑voltage switching
• 8.3A continuous drain current supports high‑current loads
• 2W power dissipation manages thermal stress in confined layouts
• 11nC typical gate charge enables efficient gate driving
• 30V Vds enables moderate‑voltage switching
• 8.3A continuous drain current supports high‑current loads
• 2W power dissipation manages thermal stress in confined layouts
• 11nC typical gate charge enables efficient gate driving
Applications
• Suitable for motor driver stages in Compact systems
• Ideal for power management in industrial controls
• Used with gate drivers requiring moderate charge handling
• Can be used for DC switching in instrumentation
• Suitable for prototyping via through‑hole boards
• Ideal for power management in industrial controls
• Used with gate drivers requiring moderate charge handling
• Can be used for DC switching in instrumentation
• Suitable for prototyping via through‑hole boards
What gate voltage range can be applied safely?
The gate can be driven up to 12V relative to the source.
What temperatures can it tolerate during operation?
It is specified to function from -55°C up to 150°C.
How does its forward voltage affect efficiency?
The device exhibits a forward voltage of 1.3V which affects conduction loss during forward current flow.
Is it intended for automotive applications?
It is not designated as automotive‑grade but conforms to RoHS environmental restrictions.
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