Infineon BSZ Type P-Channel MOSFET, -40 A, -30 V P, 8-Pin TDSON

RS Stock No.:: 258-0719P
Mfr. Part No.:: BSZ120P03NS3GATMA1
Brand:: Infineon

Infineon BSZ Type P-Channel MOSFET, -40 A, -30 V P, 8-Pin TDSON

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100 - 245	$1.276	23%
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500 +	$0.808	51%

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RS Stock No.:: 258-0719P
Mfr. Part No.:: BSZ120P03NS3GATMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-40A
	Maximum Drain Source Voltage Vds	-30V
	Package Type	TDSON
	Series	BSZ
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	P
	Typical Gate Charge Qg @ Vgs	30nC
	Maximum Power Dissipation Pd	52W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25V
	Forward Voltage Vf	-1.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -40A
	Maximum Drain Source Voltage Vds -30V
	Package Type TDSON
	Series BSZ
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode P
	Typical Gate Charge Qg @ Vgs 30nC
	Maximum Power Dissipation Pd 52W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25V
	Forward Voltage Vf -1.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Automotive Standard No

Datasheet - BSZ120P03NS3GATMA1

Infineon BSZ Series MOSFET, 30V Drain-Source Voltage, 40A Continuous Drain Current - BSZ120P03NS3GATMA1

This p-channel MOSFET is a surface-mount transistor designed for high-current switching in Compact assemblies. It operates across a wide temperature range and conforms to specified material and environmental standards, making it suitable for electronic applications that demand controlled power handling and Compact packaging.

Features and Benefits:

• Low Rds(on)12mΩ reduces conduction losses and improves efficiency
• 52W power dissipation enables higher thermal throughput
• 30nC gate charge supports Faster switching performance
• ±25V gate tolerance allows flexible gate-drive designs
• Surface TDSON package facilitates dense board layout

Applications

• Suitable for high-current polarity switching circuits
• Ideal for power-rail protection and load switching
• Used with motor driver stages requiring P-channel devices
• Can be used for battery management and power distribution
• Suitable for Compact surface-mount power modules