Infineon IPA Type N-Channel MOSFET, 26 A, 650 V N TO-220 IPAN60R360PFD7SXKSA1

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Subtotal (1 pack of 2 units)*

$4.83

(exc. GST)

$5.554

(inc. GST)

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  • Plus 338 unit(s) shipping from 26 January 2026
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Units
Per unit
Per Pack*
2 - 8$2.415$4.83
10 - 18$2.155$4.31
20 - 28$1.69$3.38
30 - 38$1.415$2.83
40 +$1.085$2.17

*price indicative

Packaging Options:
RS Stock No.:
258-3782
Mfr. Part No.:
IPAN60R360PFD7SXKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220

Series

IPA

Mount Type

Surface

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO-220 FullPAK NL package achieves low switching losses, featuring RDS(on) of 360mOhm. The 600V CoolMOS PFD7 comes with an integrated fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Excellent commutation ruggedness

Low EMI

Broad package portfolio

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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