Infineon iPB Type P-Channel MOSFET, -120 A, -40 V Enhancement TO-263 IPB120P04P404ATMA2
- RS Stock No.:
- 258-3797
- Mfr. Part No.:
- IPB120P04P404ATMA2
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 1000 units)*
$2,811.00
(exc. GST)
$3,233.00
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
In Stock
- 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | $2.811 | $2,811.00 |
| 2000 - 2000 | $2.53 | $2,530.00 |
| 3000 + | $2.277 | $2,277.00 |
*price indicative
- RS Stock No.:
- 258-3797
- Mfr. Part No.:
- IPB120P04P404ATMA2
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -120A | |
| Maximum Drain Source Voltage Vds | -40V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -120A | ||
Maximum Drain Source Voltage Vds -40V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P2 power-transistor is lowest switching and conduction power losses for highest thermal efficiency. Robust packages with superior quality and reliability.
No charge pump required for high side drive
Simple interface drive circuit
Highest current capability
Related links
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB120P04P404ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 800 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P407ATMA2
- Infineon iPB Type P-Channel MOSFET 40 V Enhancement TO-263 IPB80P04P4L04ATMA2
