Infineon IPD Type N-Channel MOSFET, 59 A, 100 V N, 3-Pin TO-252 IPD122N10N3GATMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 2 units)*

$5.75

(exc. GST)

$6.612

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 1,262 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8$2.875$5.75
10 - 98$2.58$5.16
100 - 248$2.025$4.05
250 - 498$1.665$3.33
500 +$1.315$2.63

*price indicative

Packaging Options:
RS Stock No.:
258-3833
Mfr. Part No.:
IPD122N10N3GATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

59A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

94W

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

26nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM.

Excellent switching performance

Less paralleling required

Smallest board-space consumption

Easy-to-design products

Related links