Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET, 20 A, 100 V Dual N, 8-Pin TDSON

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Subtotal (1 pack of 2 units)*

$7.59

(exc. GST)

$8.728

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$3.795$7.59
10 - 98$3.385$6.77
100 - 248$2.655$5.31
250 - 498$2.185$4.37
500 +$1.72$3.44

*price indicative

Packaging Options:
RS Stock No.:
258-3883
Mfr. Part No.:
IPG20N10S4L22AATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOSTM-T2

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Dual N

Typical Gate Charge Qg @ Vgs

21nC

Maximum Power Dissipation Pd

60W

Maximum Gate Source Voltage Vgs

±16 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is Dual N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC Q101 qualified

MSL1 up to 260°C peak reflow

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