STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel

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Subtotal 10 units (supplied on a continuous strip)*

$274.90

(exc. GST)

$316.10

(inc. GST)

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Temporarily out of stock
  • 600 unit(s) shipping from 19 May 2027
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Units
Per unit
10 - 99$27.49
100 - 249$26.12
250 - 499$24.83
500 +$23.56

*price indicative

Packaging Options:
RS Stock No.:
261-5043P
Mfr. Part No.:
SCT055HU65G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

Tape & Reel

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

29nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

18.58mm

Height

3.5mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MA

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package


The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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