Infineon HEXFET Type N-Channel MOSFET, 63 A, 100 V Enhancement, 3-Pin IPAK IRFU4510PBF

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Subtotal (1 pack of 5 units)*

$24.51

(exc. GST)

$28.185

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45$4.902$24.51
50 - 95$3.81$19.05
100 - 245$3.422$17.11
250 - 995$3.35$16.75
1000 +$3.112$15.56

*price indicative

Packaging Options:
RS Stock No.:
262-6779
Mfr. Part No.:
IRFU4510PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

63A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

13.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Maximum Power Dissipation Pd

143W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.73mm

Height

2.39mm

Width

6.22 mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.

Enhanced body diode dV/dt and dI/dt capability

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