Microchip VP2110 Type P-Channel MOSFET, -120 mA, 100 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 264-8951P
- Mfr. Part No.:
- VP2110K1-G
- Brand:
- Microchip
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 50 units (supplied on a continuous strip)*
$85.95
(exc. GST)
$98.85
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
In Stock
- 1,810 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | $1.719 |
| 100 - 240 | $0.924 |
| 250 - 990 | $0.905 |
| 1000 + | $0.887 |
*price indicative
- RS Stock No.:
- 264-8951P
- Mfr. Part No.:
- VP2110K1-G
- Brand:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -120mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | VP2110 | |
| Package Type | SOT-23 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.3mm | |
| Height | 1.12mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -120mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series VP2110 | ||
Package Type SOT-23 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.3mm | ||
Height 1.12mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-to-drain diode
High input impedance and high gain
Related links
- Megger MFT1825 Multifunction Tester Earth Resistance Measurement With Australia Mains
- RS PRO Stainless Steel Metal Sheet 500mm x 300mm, 3mm Thick
- Tele Timer Relay
- Carling Technologies Illuminated DPDT, On-(On) Rocker Switch Panel Mount
- Unistrut 41 x 41mm Galvanised Steel Strut, 2m Long
- RS PRO Stainless Steel Metal Sheet 500mm x 300mm, 1.2mm Thick
- RS PRO Galvanised Threaded Steel & Stainless Steel Pipe 26.4mm Nominal Outer Diameter, 3/4 in BSPT Connection
- Xpelair 90057AW GX9 Window Mounted Extractor Fan 670m³/h, Duct Size 225mm