Microchip VP2110 Type P-Channel MOSFET, -120 mA, 100 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 264-8951P
- Mfr. Part No.:
- VP2110K1-G
- Brand:
- Microchip
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Subtotal 50 units (supplied on a continuous strip)*
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$79.85
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Units | Per unit |
|---|---|
| 50 - 90 | $1.389 |
| 100 - 240 | $0.745 |
| 250 - 990 | $0.729 |
| 1000 + | $0.715 |
*price indicative
- RS Stock No.:
- 264-8951P
- Mfr. Part No.:
- VP2110K1-G
- Brand:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -120mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | VP2110 | |
| Package Type | SOT-23 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -120mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series VP2110 | ||
Package Type SOT-23 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-to-drain diode
High input impedance and high gain