Vishay SIS N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- RS Stock No.:
- 268-8340
- Mfr. Part No.:
- SIS112LDN-T1-GE3
- Brand:
- Vishay
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 25 - 25 | $1.182 | $29.55 | - |
| 50 - 75 | $1.159 | $28.98 | 1% |
| 100 - 225 | $0.882 | $22.05 | 25% |
| 250 - 975 | $0.864 | $21.60 | 26% |
| 1000 + | $0.535 | $13.38 | 54% |
*price indicative
- RS Stock No.:
- 268-8340
- Mfr. Part No.:
- SIS112LDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK 1212-8 | |
| Series | SIS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.119Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 19.8W | |
| Typical Gate Charge Qg @ Vgs | 11.8nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK 1212-8 | ||
Series SIS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.119Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 19.8W | ||
Typical Gate Charge Qg @ Vgs 11.8nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is single configuration MOSFET. It is lead free and halogen free and It is used an application as primary side switch, motor drive switch and boost converter.
Tuned for the lowest figure of merit
ROHS compliant
UIS tested 100 percent
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