Infineon BSL606SN N-Channel MOSFET, 4.5 A, 60 V Enhancement, 6-Pin PG-TSOP-6 BSL606SNH6327XTSA1
- RS Stock No.:
- 273-2853
- Mfr. Part No.:
- BSL606SNH6327XTSA1
- Brand:
- Infineon
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- RS Stock No.:
- 273-2853
- Mfr. Part No.:
- BSL606SNH6327XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-TSOP-6 | |
| Series | BSL606SN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Length | 40mm | |
| Width | 40mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-TSOP-6 | ||
Series BSL606SN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Length 40mm | ||
Width 40mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
Infineon BSL606SN Series MOSFET, 60V Maximum Drain-Source Voltage, 4.5A Maximum Continuous Drain Current - BSL606SNH6327XTSA1
This n-channel enhancement MOSFET is designed for surface-mounted power switching in automotive environments. It delivers moderate current handling and voltage capability with a low forward voltage characteristic, suitable for control and load-switching roles across a wide ambient range. The device is packaged for Compact assembly and meets automotive stress-test qualification for use in temperature-extreme applications.
Features and Benefits:
• 60V Maximum Drain-Source Voltage provides robust voltage headroom
• 4.5A Maximum Continuous Drain Current enables moderate current switching
• 1.1V Forward Voltage minimises conduction losses during operation
• 3.7nC Typical Gate Charge enables Faster switching response
• 2W Maximum Power Dissipation allows continuous thermal handling
• 4.5A Maximum Continuous Drain Current enables moderate current switching
• 1.1V Forward Voltage minimises conduction losses during operation
• 3.7nC Typical Gate Charge enables Faster switching response
• 2W Maximum Power Dissipation allows continuous thermal handling
Applications
• Suitable for automotive power distribution modules
• Ideal for DC load switching in control units
• Used with Compact surface assemblies requiring space savings
• Can be used for motor driver low-side switching tasks
• Ideal for DC load switching in control units
• Used with Compact surface assemblies requiring space savings
• Can be used for motor driver low-side switching tasks
What gate drive limitations should I consider?
The device accepts up to 20V between gate and source, so gate-drive circuits must remain within this limit.
How does the device handle temperature extremes?
It operates across a range from -55°C to 150°C, allowing use in harsh ambient and under‑bonnet conditions.
What mounting method is required for assembly?
It is intended for surface mounting in a PG-TSOP-6 package to suit automated PCB assembly.
What channel and mode does it use for switching?
The transistor uses an n-type channel in enhancement mode for conventional MOSFET switching behaviour.
Are there specific industry approvals for automotive use?
It conforms to AEC‑Q101 qualification for acceptance in automotive electronic applications.
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