Infineon OptiMOS Type P-Channel MOSFET, -16.4 A, 60 V Enhancement, 3-Pin PG-TO252-3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

$12.94

(exc. GST)

$14.88

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 2,420 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40$1.294$12.94
50 - 90$1.096$10.96
100 - 240$1.015$10.15
250 - 990$0.996$9.96
1000 +$0.976$9.76

*price indicative

RS Stock No.:
273-3012
Mfr. Part No.:
IPD900P06NMATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-16.4A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TO252-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

63W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

-27nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

DIN IEC 68-1: 55/175/56, RoHS, IEC61249-2-21

Automotive Standard

No

The Infineon P-channel MOSFETs in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in mediu

Easy interface to MCU

Fast switching

Avalanche ruggedness

Related links