STMicroelectronics STW N-Channel MOSFET, 92 A Enhancement, 3-Pin TO-247 STWA65N023M9
- RS Stock No.:
- 275-1386P
- Mfr. Part No.:
- STWA65N023M9
- Brand:
- STMicroelectronics
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$156.50
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$180.00
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In Stock
- 283 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 5 - 9 | $31.30 |
| 10 + | $23.87 |
*price indicative
- RS Stock No.:
- 275-1386P
- Mfr. Part No.:
- STWA65N023M9
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 92A | |
| Package Type | TO-247 | |
| Series | STW | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 463W | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 92A | ||
Package Type TO-247 | ||
Series STW | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 463W | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
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