Vishay SIRS Type N-Channel MOSFET, 225 A, 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3

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Subtotal (1 pack of 2 units)*

$12.76

(exc. GST)

$14.68

(inc. GST)

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  • Plus 5,994 unit(s) shipping from 26 January 2026
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Units
Per unit
Per Pack*
2 - 48$6.38$12.76
50 - 98$4.785$9.57
100 - 248$4.24$8.48
250 - 998$4.14$8.28
1000 +$4.075$8.15

*price indicative

Packaging Options:
RS Stock No.:
279-9971
Mfr. Part No.:
SIRS5100DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

225A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SIRS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0025Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

102nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

240W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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