onsemi Type N-Channel MOSFET, 14 A, 50 V Enhancement, 3-Pin IPAK (TO-251) RFD14N05L
- RS Stock No.:
- 325-7580
- Mfr. Part No.:
- RFD14N05L
- Brand:
- onsemi
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Bulk discount available
Subtotal (1 unit)*
$1.89
(exc. GST)
$2.17
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Being discontinued
- Final 9 unit(s), ready to ship from another location
Units | Per unit |
|---|---|
| 1 - 624 | $1.89 |
| 625 - 1249 | $1.86 |
| 1250 + | $1.85 |
*price indicative
- RS Stock No.:
- 325-7580
- Mfr. Part No.:
- RFD14N05L
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | IPAK (TO-251) | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.3mm | |
| Length | 6.8mm | |
| Standards/Approvals | No | |
| Width | 2.5 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type IPAK (TO-251) | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Operating Temperature 175°C | ||
Height 6.3mm | ||
Length 6.8mm | ||
Standards/Approvals No | ||
Width 2.5 mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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