N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB Infineon IRF530NPBF

Technical data sheets (2)

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Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	100 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	90 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	70 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	37 nC @ 10 V
Length	10.54mm
Maximum Operating Temperature	+175 °C
Width	4.69mm
Height	8.77mm
Minimum Operating Temperature	-55 °C