N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB Infineon IRF530NPBF

RS Stock No.:: 919-4842
Mfr. Part No.:: IRF530NPBF
Brand:: Infineon

N-Channel MOSFET, 17 A, 100 V, 3-Pin TO-220AB Infineon IRF530NPBF

150 In stock for delivery within 7 working day(s)

Price (ex. GST) Each (In a Tube of 50)

$1.329

(exc. GST)

$1.528

(inc. GST)

Units	Per unit	Per Tube*
50 - 50	$1.329	$66.45
100 - 150	$1.305	$65.25
200 +	$1.088	$54.40

*price indicative

RS Stock No.:: 919-4842
Mfr. Part No.:: IRF530NPBF
Brand:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: MX

Product Details

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	17 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	90 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	70 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4.69mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	37 nC @ 10 V
Length	10.54mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	8.77mm