onsemi Isolated PowerTrench 2 N-Channel MOSFET, 6.5 A, 20 V Enhancement, 8-Pin SOIC

RS Stock No.:: 671-0769P
Mfr. Part No.:: FDS9926A
Brand:: onsemi

onsemi Isolated PowerTrench 2 N-Channel MOSFET, 6.5 A, 20 V Enhancement, 8-Pin SOIC

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Subtotal 625 units (supplied on a reel)*

$1,293.75

(exc. GST)

$1,487.50

(inc. GST)

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In Stock

145 unit(s) ready to ship from another location
Plus 2,500 unit(s) shipping from 19 May 2027

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Units	Per unit
625 - 1245	$2.07
1250 +	$2.044

*price indicative

RS Stock No.:: 671-0769P
Mfr. Part No.:: FDS9926A
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.5A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOIC
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	730mV
	Maximum Gate Source Voltage Vgs	-10V, +10V
	Typical Gate Charge Qg @ Vgs	6.2nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Width	4mm
	Height	1.5mm
	Length	5mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.5A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOIC
	Series PowerTrench
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 730mV
	Maximum Gate Source Voltage Vgs -10V, +10V
	Typical Gate Charge Qg @ Vgs 6.2nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Width 4mm
	Height 1.5mm
	Length 5mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.