Infineon HEXFET Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-220

RS Stock No.:: 688-6850
Mfr. Part No.:: IRF3710ZPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 59 A, 100 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 2 units)*

$7.37

(exc. GST)

$8.476

(inc. GST)

FREE delivery for orders over $60.00 ex GST

In Stock

38 unit(s) ready to ship from another location
Plus 1,004 unit(s) shipping from 28 January 2026

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Units	Per unit	Per Pack*
2 - 12	$3.685	$7.37
14 - 24	$3.625	$7.25
26 +	$3.56	$7.12

*price indicative

RS Stock No.:: 688-6850
Mfr. Part No.:: IRF3710ZPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	59A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	160W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	82nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Height	8.77mm
	Width	4.69 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 59A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 160W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 82nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Height 8.77mm
	Width 4.69 mm
	Standards/Approvals No
	Automotive Standard No

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