Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220

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$8.57

(exc. GST)

$9.856

(inc. GST)

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  • 12 unit(s) ready to ship from another location
  • Plus 1,500 unit(s) shipping from 21 May 2026
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Per Pack*
2 - 12$4.285$8.57
14 +$4.18$8.36

*price indicative

RS Stock No.:
688-6973
Mfr. Part No.:
IRFB5620PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

73mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

14W

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Height

9.02mm

Automotive Standard

No

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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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