Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

RS Stock No.:: 780-0605
Mfr. Part No.:: NTJD1155LT1G
Brand:: onsemi

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

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$13.34

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$15.34

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760 - 1480	$0.663	$13.26
1500 +	$0.65	$13.00

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RS Stock No.:: 780-0605
Mfr. Part No.:: NTJD1155LT1G
Brand:: onsemi

NTJD1155L Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	8 V
Package Type	SOT-363 (SC-88)
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	320 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	400 mW
Transistor Configuration	N+P Loadswitch
Maximum Gate Source Voltage	+8 V
Number of Elements per Chip	2
Length	2.2mm
Maximum Operating Temperature	+150 °C
Width	1.35mm
Transistor Material	Si
Height	1mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

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Dual N/P-Channel MOSFET, ON Semiconductor

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