Vishay TrenchFET Type N-Channel MOSFET, 58 A, 30 V Enhancement, 8-Pin SO-8 SIRA14DP-T1-GE3

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Subtotal (1 tape of 10 units)*

$12.25

(exc. GST)

$14.09

(inc. GST)

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  • Plus 1,990 unit(s) shipping from 18 May 2026
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Units
Per unit
Per Tape*
10 - 740$1.225$12.25
750 - 1490$1.203$12.03
1500 +$1.177$11.77

*price indicative

Packaging Options:
RS Stock No.:
787-9389
Mfr. Part No.:
SIRA14DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.76V

Maximum Power Dissipation Pd

31.2W

Typical Gate Charge Qg @ Vgs

19.4nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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