onsemi NDT N-Channel MOSFET, 2.8 A, 60 V Enhancement, 4-Pin SOT-223

RS Stock No.:: 806-1255P
Mfr. Part No.:: NDT014L
Brand:: onsemi

onsemi NDT N-Channel MOSFET, 2.8 A, 60 V Enhancement, 4-Pin SOT-223

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Subtotal 1000 units (supplied on a reel)*

$1,914.00

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$2,201.00

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1000 - 1980	$1.914
2000 +	$1.884

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RS Stock No.:: 806-1255P
Mfr. Part No.:: NDT014L
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	2.8A
	Maximum Drain Source Voltage Vds	60V
	Series	NDT
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-65°C
	Maximum Power Dissipation Pd	3W
	Typical Gate Charge Qg @ Vgs	3.6nC
	Forward Voltage Vf	850mV
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	3.7mm
	Length	6.7mm
	Height	1.7mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 2.8A
	Maximum Drain Source Voltage Vds 60V
	Series NDT
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -65°C
	Maximum Power Dissipation Pd 3W
	Typical Gate Charge Qg @ Vgs 3.6nC
	Forward Voltage Vf 850mV
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 3.7mm
	Length 6.7mm
	Height 1.7mm
	Automotive Standard No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.