Dual N-Channel MOSFET, 4.9 A, 30 V, 8-Pin SOIC Infineon IRF7303TRPBF

This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.

• Enhanced efficiency with a low Rds(on) of 80 mΩ
• High power dissipation capability with a maximum of 2W
• Dual-channel integration for increased functionality in designs
• Robust thermal operation up to +150°C for versatile applications
• Optimised for enhancement mode operation to improve energy management
• Compact SOIC package facilitates easy integration into modern PCBs

• Used in power supply circuits for voltage regulation
• Employed in motor control systems for efficient operation
• Suitable for lighting requiring robust switching
• Integrated into consumer electronics for improved power efficiency
• Ideal for automotive systems that require dependable performance

The maximum gate-source voltage is ±20V, ensuring compatibility with various control circuits.

A lower Rds(on) reduces power losses during operation, enhancing overall efficiency in applications.

Yes, it operates within a temperature range of -55°C to +150°C, which is suitable for harsh environments.

It is designed for surface mount technology (SMT) circuit boards, allowing for efficient space utilisation.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.