Infineon Isolated HEXFET 2 N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC

RS Stock No.:: 826-8841P
Mfr. Part No.:: IRF7303TRPBF
Brand:: Infineon

Infineon Isolated HEXFET 2 N-Channel MOSFET, 4.9 A, 30 V Enhancement, 8-Pin SOIC

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RS Stock No.:: 826-8841P
Mfr. Part No.:: IRF7303TRPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.9A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	80mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	16.7nC
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Standards/Approvals	No
	Height	1.5mm
	Width	4mm
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.9A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 80mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 16.7nC
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Standards/Approvals No
	Height 1.5mm
	Width 4mm
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard No

Infineon HEXFET Series MOSFET, 4.9A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7303TRPBF

This N-channel MOSFET is designed for efficient power management in various electronic applications. With a maximum continuous drain current of 4.9A and a drain-source voltage of 30V, it delivers high performance in different environments. Its surface mount capability makes it suitable for Compact circuit designs where space efficiency and thermal performance are important. This device demonstrates reliability and effectiveness in automation and electronics.