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Infineon OptiMOS™ N-Channel MOSFET, 80 A, 55 V, 3-Pin I2PAK IPI80N06S208AKSA1

RS Stock No.:: 857-6779
Mfr. Part No.:: IPI80N06S208AKSA1
Brand:: Infineon

Infineon OptiMOS™ N-Channel MOSFET, 80 A, 55 V, 3-Pin I2PAK IPI80N06S208AKSA1

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Stock information currently inaccessible

RS Stock No.:: 857-6779
Mfr. Part No.:: IPI80N06S208AKSA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	55 V
	Series	OptiMOS™
	Package Type	I2PAK (TO-262)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	6.6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	250 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	10mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	86 nC @ 10 V
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Width	4.4mm
	Height	9.25mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 55 V
	Series OptiMOS™
	Package Type I2PAK (TO-262)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 6.6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 250 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 10mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 86 nC @ 10 V
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Width 4.4mm
	Height 9.25mm
	Minimum Operating Temperature -55 °C

RoHS Status: Not Applicable

Infineon OptiMOS™ N-Channel MOSFET, 80 A, 55 V, 3-Pin I2PAK IPI80N06S208AKSA1

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