onsemi PowerTrench Type P-Channel MOSFET, 4.4 A, 100 V Enhancement, 8-Pin WDFN

RS Stock No.:: 864-8215P
Mfr. Part No.:: FDMC86139P
Brand:: onsemi

onsemi PowerTrench Type P-Channel MOSFET, 4.4 A, 100 V Enhancement, 8-Pin WDFN

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Subtotal 750 units (supplied on a reel)*

$3,739.50

(exc. GST)

$4,300.50

(inc. GST)

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In Stock

Plus 2,850 unit(s) shipping from 16 November 2026

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Units	Per unit
750 - 1495	$4.986
1500 +	$4.912

*price indicative

RS Stock No.:: 864-8215P
Mfr. Part No.:: FDMC86139P
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	4.4A
	Maximum Drain Source Voltage Vds	100V
	Series	PowerTrench
	Package Type	WDFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	104mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	40W
	Typical Gate Charge Qg @ Vgs	16nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-25V, +25V
	Forward Voltage Vf	-1.3V
	Maximum Operating Temperature	150°C
	Length	3.3mm
	Height	725μm
	Standards/Approvals	No
	Width	3.3mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 4.4A
	Maximum Drain Source Voltage Vds 100V
	Series PowerTrench
	Package Type WDFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 104mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 40W
	Typical Gate Charge Qg @ Vgs 16nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -25V, +25V
	Forward Voltage Vf -1.3V
	Maximum Operating Temperature 150°C
	Length 3.3mm
	Height 725μm
	Standards/Approvals No
	Width 3.3mm
	Automotive Standard No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.