onsemi PowerTrench Type P-Channel MOSFET, 8.8 A, 30 V Enhancement, 8-Pin SOIC SI4435DY
- RS Stock No.:
- 903-4412
- Mfr. Part No.:
- SI4435DY
- Brand:
- onsemi
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View bulk pricing optionsSubtotal (10 units, in packs of 10)*
$21.07
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$24.23
(inc. GST)
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Last RS stock
- 10 left, ready to ship from another location
- Final 3,760 unit(s) shipping from 08 October 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 620 | $2.107 | $21.07 |
| 630 - 1240 | $2.055 | $20.55 |
| 1250 + | $2.023 | $20.23 |
*price indicative
- RS Stock No.:
- 903-4412
- Mfr. Part No.:
- SI4435DY
- Brand:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Solder | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.9mm | |
| Height | 1.57mm | |
| Width | 3.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Solder | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 4.9mm | ||
Height 1.57mm | ||
Width 3.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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