Infineon HEXFET N-Channel MOSFET, 32 A, 100 V Enhancement, 3-Pin TO-252

RS Stock No.:: 915-5014P
Mfr. Part No.:: IRFR3411TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 32 A, 100 V Enhancement, 3-Pin TO-252

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RS Stock No.:: 915-5014P
Mfr. Part No.:: IRFR3411TRPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	32A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	48nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	130W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	7.49mm
	Length	6.73mm
	Height	2.39mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 32A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 48nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 130W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 7.49mm
	Length 6.73mm
	Height 2.39mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 32A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFR3411TRPBF

This MOSFET is crucial for high-power electronic applications, delivering robust performance with low on-resistance and a wide operating temperature range. Utilising HEXFET technology, it ensures efficient operation, making it suitable for various industrial and automation tasks. Its surface-mount DPAK (TO-252) package facilitates easy integration into electronic circuits, while the enhancement mode design optimises switching efficiency.

Features & Benefits

• Continuous drain current capability of 32A for versatile applications

• Maximum voltage rating of 100V for flexible usage

• Low RDS(on) of 44mΩ reduces power loss and heat generation

• Maximum power dissipation of 130W for enhanced durability

• Supports high-speed switching for improved circuit performance

• Surface mounting design simplifies PCB integration

Applications

• Utilised in DC-DC converters within industrial power supply systems

• Effective for motor control circuits in robotics and automation

• Suitable for power management in telecommunications equipment

• Employed in electronic lighting systems for energy efficiency

What type of PCB mounting methods are compatible with this device?

It is designed for surface mounting using vapour phase, infrared, or wave soldering techniques, ensuring versatility in assembly methods.

Can this device handle pulsed drain currents?

Yes, it is rated for pulsed drain currents up to 110A, allowing flexibility in transient load conditions without damage.

What is the thermal resistance for this component?

The junction-to-case thermal resistance is 1.2°C/W, enabling effective heat management during operation.

What temperature range can it operate in?

This MOSFET operates effectively between -55°C and +175°C, suited for extreme environmental conditions.

How does the gate charge impact performance?

With a typical gate charge of 48nC at 10V, it ensures faster switching times, reducing losses and improving efficiency in circuits.