Infineon LogicFET N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF

RS Stock No.:: 919-4791
Mfr. Part No.:: IRL3803PBF
Brand:: Infineon

Infineon LogicFET N-Channel MOSFET, 140 A, 30 V, 3-Pin TO-220AB IRL3803PBF

Bulk discount available

Subtotal (1 tube of 50 units)**

$134.30

(exc. GST)

$154.45

(inc. GST)

Available for back order.*

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Units	Per unit	Per Tube**
50 - 50	$2.686	$134.30
100 - 150	$2.624	$131.20
200 +	$2.578	$128.90

**price indicative

RS Stock No.:: 919-4791
Mfr. Part No.:: IRL3803PBF
Brand:: Infineon

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon LogicFET Series MOSFET, 140A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRL3803PBF

This N-channel MOSFET is intended for high efficiency in power applications, with a low Rds(on) making it suitable for various electronic and mechanical systems. Through advanced processing techniques, it provides exceptional reliability in challenging environments, operating within a temperature range of -55°C to +175°C. The component is capable of supporting high power dissipation needs, making it an essential element in automation and industrial applications.

Features & Benefits

• Fast switching speed enhances overall system performance
• High continuous drain current of 140A accommodates various applications
• Low maximum drain-source resistance reduces power loss
• Dual gate-source voltage ratings offer design flexibility
• Fully avalanche rated to maintain performance under stress
• Efficient thermal management with TO-220AB package design

Applications

• Used in power management circuits and motor control
• Suitable for industrial automation systems that require dependability
• Applied in switching power supplies for electronic devices
• Fit for renewable energy system

What are the maximum ratings for continuous drain current?

The maximum continuous drain current is 140A at 25°C and decreases to 98A at 100°C under standard conditions.

How does the component handle thermal management?

It incorporates low thermal resistance, allowing for power dissipation up to 200W, with a linear derating factor of 1.3 W/°C.

What is the significance of its enhancement mode?

The enhancement mode permits operation without substantial gate voltage, enabling efficient control over the switching mechanism, which is essential for low-power applications.

What specific voltage ratings does it support?

It accommodates a gate-to-source voltage range of ±16V and a maximum drain-source breakdown voltage of 30V, enhancing versatility in circuit designs.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	140 A
Maximum Drain Source Voltage	30 V
Series	LogicFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	6 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Transistor Material	Si
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	140 nC @ 4.5 V
Maximum Operating Temperature	+175 °C
Height	8.77mm
Minimum Operating Temperature	-55 °C