N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250NPBF

RS Stock No.:: 919-4810
Mfr. Part No.:: IRFP250NPBF
Brand:: Infineon

N-Channel MOSFET, 30 A, 200 V, 3-Pin TO-247AC Infineon IRFP250NPBF

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Subtotal (1 tube of 25 units)**

$79.95

(exc. GST)

$91.95

(inc. GST)

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Units	Per unit	Per Tube**
25 - 25	$3.198	$79.95
50 - 75	$3.182	$79.55
100 +	$3.138	$78.45

**price indicative

RS Stock No.:: 919-4810
Mfr. Part No.:: IRFP250NPBF
Brand:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF

This power MOSFET is engineered for high performance across various electronic applications. As an N-channel MOSFET, it efficiently enhances current flow when voltage is applied. It is notable for its capacity to manage high current levels while maintaining low on-resistance, which makes it suitable for power-intensive applications.

Features & Benefits

• Continuous drain current rating of 30A supports robust performance
• Power dissipation capacity of 214W accommodates heavy-duty applications
• Maximum drain-source voltage of 200V contributes to device reliability
• Low Rds(on) of 75 mΩ minimises energy loss during operation
• Enhancement mode improves control and efficiency in circuit applications
• Compatible with TO-247AC package for seamless integration into existing systems

Applications

• Power supplies for industrial automation
• Driving high-current loads in electronic circuits
• Converters and inverters in renewable energy systems
• Motor control requiring fast switching

How does this MOSFET handle high temperatures?

With a maximum operating temperature of +175°C, it functions effectively in high-thermal environments, ensuring consistent performance under stress.

What are the implications of the specified on-resistance?

A low Rds(on) of 75 mΩ results in reduced power losses, enhancing overall efficiency and decreasing heat generation during use.

Is this device suitable for pulsed applications?

Yes, it can handle pulsed drain currents up to 120A, making it appropriate for short-duration, high-current applications.

How does it manage gate voltage during operation?

The device accommodates a range of gate-to-source voltages from -20 V to +20 V, providing flexibility in various control circuits.

What is the significance of the avalanche ratings?

The single pulse avalanche energy rating of 315 mJ indicates its capability to endure brief energy surges, safeguarding it under fault conditions.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	200 V
Package Type	TO-247AC
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	214 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	15.9mm
Typical Gate Charge @ Vgs	123 nC @ 10 V
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Width	5.3mm
Height	20.3mm
Minimum Operating Temperature	-55 °C