Infineon High Side, High Side Power Control Switch
- RS Stock No.:
- 258-0673P
- Mfr. Part No.:
- BGS12PN10E6327XTSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
$11.40
(exc. GST)
$13.10
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- 7,500 unit(s) shipping from 28 May 2026
- Plus 7,500 unit(s) shipping from 02 July 2026
- Plus 7,500 unit(s) shipping from 27 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 95 | $1.14 |
| 100 - 245 | $1.052 |
| 250 - 495 | $0.884 |
| 500 + | $0.802 |
*price indicative
- RS Stock No.:
- 258-0673P
- Mfr. Part No.:
- BGS12PN10E6327XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Power Switch Topology | High Side | |
| Product Type | Power Control Switch | |
| Power Switch Type | High Side | |
| Minimum Supply Voltage | 1.8V | |
| Maximum Supply Voltage | 3.6V | |
| Maximum Operating Temperature | 150°C | |
| Minimum Operating Temperature | -55°C | |
| Operating Current | 120μA | |
| Standards/Approvals | RoHS/WEEE | |
| Series | BGS12PN10 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Power Switch Topology High Side | ||
Product Type Power Control Switch | ||
Power Switch Type High Side | ||
Minimum Supply Voltage 1.8V | ||
Maximum Supply Voltage 3.6V | ||
Maximum Operating Temperature 150°C | ||
Minimum Operating Temperature -55°C | ||
Operating Current 120μA | ||
Standards/Approvals RoHS/WEEE | ||
Series BGS12PN10 | ||
Automotive Standard No | ||
The Infineon SPDT high linearity, high power RF switch is a single pole dual throw high power RF switch optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, CMOS or TTL compatible control input signal. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally.
No power supply blocking required
No insertion loss change within supply voltage range
No linearity change within supply voltage range
Suitable for EDGE / C2K / LTE / WCDMA / SV-LTE Applications
Mobile cellular Rx/Tx applications, suitable for LTE/3G
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