MPN

onsemi 1.2 kV 24 A Diode 3-Pin TO-247-3LD

RS Stock No.:: 218-672P
Mfr. Part No.:: NDSH20120CDN
Brand:: onsemi

onsemi 1.2 kV 24 A Diode 3-Pin TO-247-3LD

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Subtotal 10 units (supplied in a tube)*

$150.50

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$173.10

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In Stock

896 unit(s) ready to ship from another location

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Units	Per unit	Saving
10 - 99	$15.05	-
100 - 499	$13.89	7%
500 - 999	$12.89	14%
1000 +	$11.56	23%

*price indicative

RS Stock No.:: 218-672P
Mfr. Part No.:: NDSH20120CDN
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Diode
	Mount Type	Through Hole
	Package Type	TO-247-3LD
	Maximum Continuous Forward Current If	24A
	Peak Reverse Repetitive Voltage Vrrm	1.2kV
	Series	NDSH
	Diode Configuration	Dual Anode Common Cathode
	Pin Count	3
	Minimum Operating Temperature	-55°C
	Peak Non-Repetitive Forward Surge Current Ifsm	546A
	Maximum Forward Voltage Vf	1.75V
	Peak Reverse Current Ir	200μA
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant

	Select all
	Brand onsemi
	Product Type Diode
	Mount Type Through Hole
	Package Type TO-247-3LD
	Maximum Continuous Forward Current If 24A
	Peak Reverse Repetitive Voltage Vrrm 1.2kV
	Series NDSH
	Diode Configuration Dual Anode Common Cathode
	Pin Count 3
	Minimum Operating Temperature -55°C
	Peak Non-Repetitive Forward Surge Current Ifsm 546A
	Maximum Forward Voltage Vf 1.75V
	Peak Reverse Current Ir 200μA
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant

Datasheet - NDSH20120CDN

COO (Country of Origin):: CN

The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling