MPN

onsemi 650 V 20 A Diode 3-Pin TO-247-3L FFSH2065BDN

RS Stock No.:: 277-071P
Mfr. Part No.:: FFSH2065BDN
Brand:: onsemi

onsemi 650 V 20 A Diode 3-Pin TO-247-3L FFSH2065BDN

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Subtotal 20 units (supplied in a tube)*

$199.80

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$229.80

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450 unit(s) ready to ship from another location

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Units	Per unit	Saving
20 - 198	$9.99	-
200 - 998	$9.21	$156.00
1000 - 1998	$8.55	$1,440.00
2000 +	$7.655	$4,670.00

*price indicative

RS Stock No.:: 277-071P
Mfr. Part No.:: FFSH2065BDN
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Diode
	Mount Type	Through Hole
	Package Type	TO-247-3L
	Maximum Continuous Forward Current If	20A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Diode Configuration	Single
	Series	FFSH
	Pin Count	3
	Maximum Forward Voltage Vf	2.4V
	Minimum Operating Temperature	-55°C
	Peak Reverse Current Ir	160μA
	Peak Non-Repetitive Forward Surge Current Ifsm	650A
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant

	Select all
	Brand onsemi
	Product Type Diode
	Mount Type Through Hole
	Package Type TO-247-3L
	Maximum Continuous Forward Current If 20A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Diode Configuration Single
	Series FFSH
	Pin Count 3
	Maximum Forward Voltage Vf 2.4V
	Minimum Operating Temperature -55°C
	Peak Reverse Current Ir 160μA
	Peak Non-Repetitive Forward Surge Current Ifsm 650A
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant

Datasheet - FFSH2065BDN

COO (Country of Origin):: CN

The ON Semiconductor Schottky diode offer superior switching performance and higher reliability compared to traditional Silicon diodes. It features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance, making SiC the next generation of power semiconductors. The system benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and smaller, more cost-effective system designs. These advantages make SiC Schottky diodes ideal for high-performance power applications.

Max junction temperature 175°C

Avalanche rated 49 mJ

High surge current capacity

Positive temperature coefficient

Ease of paralleling