MPN

onsemi 1.2 kV 10 A Schottky Diode & Rectifier Merged Pin Schottky 3-Pin TO-247-3

RS Stock No.:: 648-526P
Mfr. Part No.:: UJ3D1210KSD
Brand:: onsemi

onsemi 1.2 kV 10 A Schottky Diode & Rectifier Merged Pin Schottky 3-Pin TO-247-3

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 648-526P
Mfr. Part No.:: UJ3D1210KSD
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Mount Type	Through Hole
	Product Type	Schottky Diode & Rectifier
	Package Type	TO-247-3
	Maximum Continuous Forward Current If	10A
	Peak Reverse Repetitive Voltage Vrrm	1.2kV
	Diode Configuration	2x Common Cathode Pair
	Series	UJ3
	Rectifier Type	Merged Pin Schottky
	Pin Count	3
	Peak Non-Repetitive Forward Surge Current Ifsm	140A
	Minimum Operating Temperature	-55°C
	Maximum Forward Voltage Vf	2.6V
	Peak Reverse Current Ir	110μA
	Maximum Operating Temperature	175°C
	Length	15.9mm
	Standards/Approvals	Pb-Free, RoHS
	Height	20.96mm
	Width	5.03mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Mount Type Through Hole
	Product Type Schottky Diode & Rectifier
	Package Type TO-247-3
	Maximum Continuous Forward Current If 10A
	Peak Reverse Repetitive Voltage Vrrm 1.2kV
	Diode Configuration 2x Common Cathode Pair
	Series UJ3
	Rectifier Type Merged Pin Schottky
	Pin Count 3
	Peak Non-Repetitive Forward Surge Current Ifsm 140A
	Minimum Operating Temperature -55°C
	Maximum Forward Voltage Vf 2.6V
	Peak Reverse Current Ir 110μA
	Maximum Operating Temperature 175°C
	Length 15.9mm
	Standards/Approvals Pb-Free, RoHS
	Height 20.96mm
	Width 5.03mm
	Automotive Standard No

Datasheet - UJ3D1210KSD

COO (Country of Origin):: PH

The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Easy paralleling

Extremely fast switching not dependent on temperature

No reverse or forward recovery

100% UIS tested