MPN

onsemi 1.2 kV 50 A Diode Schottky 3-Pin TO-247

RS Stock No.:: 178-4647P
Mfr. Part No.:: FFSH40120ADN-F085
Brand:: onsemi

onsemi 1.2 kV 50 A Diode Schottky 3-Pin TO-247

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Subtotal 8 units (supplied in a tube)*

$316.00

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$363.36

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126 unit(s) ready to ship from another location

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Units	Per unit	Saving
8 - 14	$39.50	-
15 +	$38.94	1%

*price indicative

RS Stock No.:: 178-4647P
Mfr. Part No.:: FFSH40120ADN-F085
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Mount Type	Through Hole
	Product Type	Diode
	Package Type	TO-247
	Maximum Continuous Forward Current If	50A
	Peak Reverse Repetitive Voltage Vrrm	1.2kV
	Diode Configuration	Dual Common Cathode
	Rectifier Type	Schottky
	Pin Count	3
	Maximum Forward Voltage Vf	1.75V
	Peak Reverse Current Ir	400μA
	Minimum Operating Temperature	-55°C
	Peak Non-Repetitive Forward Surge Current Ifsm	1.19kA
	Maximum Operating Temperature	175°C
	Diameter	6.85mm
	Length	15.87mm
	Width	4.82mm
	Standards/Approvals	No
	Height	20.82mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Mount Type Through Hole
	Product Type Diode
	Package Type TO-247
	Maximum Continuous Forward Current If 50A
	Peak Reverse Repetitive Voltage Vrrm 1.2kV
	Diode Configuration Dual Common Cathode
	Rectifier Type Schottky
	Pin Count 3
	Maximum Forward Voltage Vf 1.75V
	Peak Reverse Current Ir 400μA
	Minimum Operating Temperature -55°C
	Peak Non-Repetitive Forward Surge Current Ifsm 1.19kA
	Maximum Operating Temperature 175°C
	Diameter 6.85mm
	Length 15.87mm
	Width 4.82mm
	Standards/Approvals No
	Height 20.82mm
	Automotive Standard AEC-Q101

Datasheet FFSH40120ADN-F085

COO (Country of Origin):: CN

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 40A, 1200V, D1, TO-247-3L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.

Max Junction Temperature 175 °C

Positive Temperature Coefficient

No Reverse Recovery / No Forward Recovery

Applications:

Automotive HEV-EV Onboard Chargers

Automotive HEV-EV DC-DC Converters

End Products:

Automotive HEV-EV Onboard Chargers