onsemi 1.2 kV 22.5 A Diode Schottky 3-Pin DPAK

RS Stock No.:: 178-4651P
Mfr. Part No.:: FFSD08120A
Brand:: onsemi

onsemi 1.2 kV 22.5 A Diode Schottky 3-Pin DPAK

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Subtotal 625 units (supplied on a reel)*

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625 - 1249	$11.99	-
1250 +	$11.82	$212.50

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RS Stock No.:: 178-4651P
Mfr. Part No.:: FFSD08120A
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Diode
	Mount Type	Surface
	Package Type	TO-252
	Maximum Continuous Forward Current If	22.5A
	Peak Reverse Repetitive Voltage Vrrm	1.2kV
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	3
	Peak Reverse Current Ir	400μA
	Minimum Operating Temperature	-55°C
	Maximum Forward Voltage Vf	1.75V
	Peak Non-Repetitive Forward Surge Current Ifsm	530A
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Height	2.39mm
	Standards/Approvals	No
	Width	6.22mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Diode
	Mount Type Surface
	Package Type TO-252
	Maximum Continuous Forward Current If 22.5A
	Peak Reverse Repetitive Voltage Vrrm 1.2kV
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 3
	Peak Reverse Current Ir 400μA
	Minimum Operating Temperature -55°C
	Maximum Forward Voltage Vf 1.75V
	Peak Non-Repetitive Forward Surge Current Ifsm 530A
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Height 2.39mm
	Standards/Approvals No
	Width 6.22mm
	Automotive Standard No

Datasheet FFSD08120A

COO (Country of Origin):: CN

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

Applications

PFC

Industrial Power

Solar

EV Charger

UPS

Welding