onsemi 650 V 20 A Diode Schottky 2-Pin TO-247

RS Stock No.:: 189-0432P
Mfr. Part No.:: FFSH2065B-F085
Brand:: onsemi

onsemi 650 V 20 A Diode Schottky 2-Pin TO-247

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Subtotal 8 units (supplied in a tube)*

$140.00

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$160.96

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Units	Per unit	Saving
8 - 14	$17.50	-
16 +	$17.23	$4.32

*price indicative

RS Stock No.:: 189-0432P
Mfr. Part No.:: FFSH2065B-F085
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Diode
	Mount Type	Through Hole
	Package Type	TO-247
	Maximum Continuous Forward Current If	20A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	2
	Peak Non-Repetitive Forward Surge Current Ifsm	889A
	Maximum Forward Voltage Vf	2.4V
	Peak Reverse Current Ir	160μA
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	15.87mm
	Height	2.82mm
	Width	4.82mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Product Type Diode
	Mount Type Through Hole
	Package Type TO-247
	Maximum Continuous Forward Current If 20A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 2
	Peak Non-Repetitive Forward Surge Current Ifsm 889A
	Maximum Forward Voltage Vf 2.4V
	Peak Reverse Current Ir 160μA
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 15.87mm
	Height 2.82mm
	Width 4.82mm
	Automotive Standard AEC-Q101

Datasheet FFSH2065B-F085

COO (Country of Origin):: CN

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-2L Automotive Silicon Carbide (SiC) Schottky Diode, 650 V

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost

Max Junction Temperature 175 °C

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

PPAP Capable

Applications

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