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onsemi 650 V 11.6 A Schottky Diode Schottky 3-Pin DPAK FFSD0865B-F085

RS Stock No.:: 195-8716P
Mfr. Part No.:: FFSD0865B-F085
Brand:: onsemi

onsemi 650 V 11.6 A Schottky Diode Schottky 3-Pin DPAK FFSD0865B-F085

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640 - 1240	$4.105	-
1260 +	$4.041	$80.64

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RS Stock No.:: 195-8716P
Mfr. Part No.:: FFSD0865B-F085
Brand:: onsemi

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Mount Type	Surface
	Product Type	Schottky Diode
	Package Type	TO-252
	Maximum Continuous Forward Current If	11.6A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Diode Configuration	Single
	Series	EliteSiC
	Rectifier Type	Schottky
	Pin Count	3
	Maximum Forward Voltage Vf	2.4V
	Minimum Operating Temperature	-55°C
	Peak Non-Repetitive Forward Surge Current Ifsm	42A
	Peak Reverse Current Ir	160A
	Maximum Operating Temperature	175°C
	Standards/Approvals	Pb-Free, RoHS
	Width	6.22mm
	Height	2.39mm
	Length	6.73mm
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Mount Type Surface
	Product Type Schottky Diode
	Package Type TO-252
	Maximum Continuous Forward Current If 11.6A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Diode Configuration Single
	Series EliteSiC
	Rectifier Type Schottky
	Pin Count 3
	Maximum Forward Voltage Vf 2.4V
	Minimum Operating Temperature -55°C
	Peak Non-Repetitive Forward Surge Current Ifsm 42A
	Peak Reverse Current Ir 160A
	Maximum Operating Temperature 175°C
	Standards/Approvals Pb-Free, RoHS
	Width 6.22mm
	Height 2.39mm
	Length 6.73mm
	Automotive Standard AEC-Q101

Datasheet FFSD0865B-F085

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8A, 650V, D2, DPAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost

Max Junction Temperature 175 °C

PPAP capable

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

Applications

Automotive HEV-EV Onboard Chargers

Automotive HEV-EV DC-DC Converters