Infineon 4 V 130 mA Diode 3-Pin SOT-323
- RS Stock No.:
- 261-3927P
- Mfr. Part No.:
- BAT1704WH6327XTSA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 100 units (supplied on a continuous strip)*
$64.50
(exc. GST)
$74.20
(inc. GST)
Spend over $80.00 ex GST for FREE delivery
In Stock
- 1,800 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 100 | $0.645 |
| 150 - 200 | $0.58 |
| 250 - 450 | $0.522 |
| 500 + | $0.47 |
*price indicative
- RS Stock No.:
- 261-3927P
- Mfr. Part No.:
- BAT1704WH6327XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | SOT-323 | |
| Maximum Continuous Forward Current If | 130mA | |
| Peak Reverse Repetitive Voltage Vrrm | 4V | |
| Diode Configuration | Series | |
| Series | BAT17-04W | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 600mV | |
| Peak Reverse Current Ir | 250nA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2mm | |
| Standards/Approvals | JEDEC47/20/22 | |
| Length | 2.1mm | |
| Height | 900μm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type SOT-323 | ||
Maximum Continuous Forward Current If 130mA | ||
Peak Reverse Repetitive Voltage Vrrm 4V | ||
Diode Configuration Series | ||
Series BAT17-04W | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 600mV | ||
Peak Reverse Current Ir 250nA | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2mm | ||
Standards/Approvals JEDEC47/20/22 | ||
Length 2.1mm | ||
Height 900μm | ||
Automotive Standard AEC-Q101 | ||
The Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make a suitable choice for mixer and detector applications at frequencies as high as 6 GHz.
RoHS compliant and halogen-free
Low capacitance and inductance
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