Vishay 1200 V 16 A Diode Switching 2-Pin TO-247 VS-HFA16PB120-N3
- RS Stock No.:
- 708-4692
- Mfr. Part No.:
- VS-HFA16PB120-N3
- Brand:
- Vishay
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$14.06
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$16.17
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- 9 unit(s) shipping from 18 June 2026
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Units | Per unit |
|---|---|
| 1 - 6 | $14.06 |
| 7 + | $13.71 |
*price indicative
- RS Stock No.:
- 708-4692
- Mfr. Part No.:
- VS-HFA16PB120-N3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | VSX | |
| Diode Configuration | Single | |
| Rectifier Type | Switching | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 190A | |
| Maximum Forward Voltage Vf | 3.93V | |
| Peak Reverse Current Ir | 20μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Recovery Time trr | 135ns | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series VSX | ||
Diode Configuration Single | ||
Rectifier Type Switching | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 190A | ||
Maximum Forward Voltage Vf 3.93V | ||
Peak Reverse Current Ir 20μA | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Recovery Time trr 135ns | ||
Maximum Operating Temperature 150°C | ||
Height 20.7mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Diodes and Rectifiers, Vishay Semiconductor
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