Vishay 100 V 10 A Diode Schottky 3-Pin D2PAK MBRB10100-E3/8W

RS Stock No.:: 813-0828P
Mfr. Part No.:: MBRB10100-E3/8W
Brand:: Vishay

Vishay 100 V 10 A Diode Schottky 3-Pin D2PAK MBRB10100-E3/8W

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200 - 395	$4.106	-
400 +	$4.044	1%

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RS Stock No.:: 813-0828P
Mfr. Part No.:: MBRB10100-E3/8W
Brand:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Diode
	Mount Type	Surface
	Package Type	TO-263
	Maximum Continuous Forward Current If	10A
	Peak Reverse Repetitive Voltage Vrrm	100V
	Series	MBR
	Diode Configuration	Single
	Rectifier Type	Schottky
	Pin Count	3
	Peak Reverse Current Ir	6mA
	Minimum Operating Temperature	-65°C
	Maximum Forward Voltage Vf	800mV
	Peak Non-Repetitive Forward Surge Current Ifsm	150A
	Maximum Operating Temperature	150°C
	Width	9.14mm
	Standards/Approvals	RoHS 2002/95/EC, J-STD-020, J-STD-002, JESD 22-B106, JESD 22-B102, JESD 201 Class 1A, WEEE 2002/96/EC, UL 94 V-0
	Diameter	3.74mm
	Length	10.45mm
	Height	4.83mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Diode
	Mount Type Surface
	Package Type TO-263
	Maximum Continuous Forward Current If 10A
	Peak Reverse Repetitive Voltage Vrrm 100V
	Series MBR
	Diode Configuration Single
	Rectifier Type Schottky
	Pin Count 3
	Peak Reverse Current Ir 6mA
	Minimum Operating Temperature -65°C
	Maximum Forward Voltage Vf 800mV
	Peak Non-Repetitive Forward Surge Current Ifsm 150A
	Maximum Operating Temperature 150°C
	Width 9.14mm
	Standards/Approvals RoHS 2002/95/EC, J-STD-020, J-STD-002, JESD 22-B106, JESD 22-B102, JESD 201 Class 1A, WEEE 2002/96/EC, UL 94 V-0
	Diameter 3.74mm
	Length 10.45mm
	Height 4.83mm
	Automotive Standard No

COO (Country of Origin):: CN

TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor

The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.