Vishay 120 V 20 A Diode Schottky 3-Pin TO-220AB V20120S-E3/4W

RS Stock No.:: 818-4317P
Mfr. Part No.:: V20120S-E3/4W
Brand:: Vishay

Vishay 120 V 20 A Diode Schottky 3-Pin TO-220AB V20120S-E3/4W

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RS Stock No.:: 818-4317P
Mfr. Part No.:: V20120S-E3/4W
Brand:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Product Type	Diode
	Mount Type	Through Hole
	Package Type	TO-220AB
	Maximum Continuous Forward Current If	20A
	Peak Reverse Repetitive Voltage Vrrm	120V
	Diode Configuration	Single
	Series	V20
	Rectifier Type	Schottky
	Pin Count	3
	Peak Non-Repetitive Forward Surge Current Ifsm	200A
	Peak Reverse Current Ir	30mA
	Minimum Operating Temperature	-40°C
	Maximum Forward Voltage Vf	1.12V
	Maximum Operating Temperature	150°C
	Diameter	10.54mm
	Width	4.7mm
	Standards/Approvals	No
	Height	15.32mm
	Length	10.54mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Diode
	Mount Type Through Hole
	Package Type TO-220AB
	Maximum Continuous Forward Current If 20A
	Peak Reverse Repetitive Voltage Vrrm 120V
	Diode Configuration Single
	Series V20
	Rectifier Type Schottky
	Pin Count 3
	Peak Non-Repetitive Forward Surge Current Ifsm 200A
	Peak Reverse Current Ir 30mA
	Minimum Operating Temperature -40°C
	Maximum Forward Voltage Vf 1.12V
	Maximum Operating Temperature 150°C
	Diameter 10.54mm
	Width 4.7mm
	Standards/Approvals No
	Height 15.32mm
	Length 10.54mm
	Automotive Standard No

COO (Country of Origin):: CN

TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor

The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over Planar Schottky rectifiers. At operating voltages of 45V and above Planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.